Text preview for : bf1101_r_wr.pdf part of Philips bf1101 r wr . Electronic Components Datasheets Active components Transistors Philips bf1101_r_wr.pdf
Back to : bf1101_r_wr.pdf | Home
DISCRETE SEMICONDUCTORS
DATA SHEET
BF1101; BF1101R; BF1101WR
N-channel dual-gate MOS-FETs
Product specification 1999 May 14
Supersedes data of 1999 Feb 01
NXP Semiconductors Product specification
BF1101; BF1101R;
N-channel dual-gate MOS-FETs
BF1101WR
FEATURES PINNING
Short channel transistor with high PIN DESCRIPTION 3
handbook, 2 columns 4
forward transfer admittance to input
1 source
capacitance ratio
2 drain
Low noise gain controlled amplifier
up to 1 GHz 3 gate 2 2 1
Partly internal self-biasing circuit to 4 gate 1
ensure good cross-modulation Top view MSB035
performance during AGC and good
DC stabilization. BF1101R marking code: NCp.
APPLICATIONS Fig.2 Simplified outline
(SOT143R).
VHF and UHF applications with
3 to 7 V supply voltage, such as
television tuners and professional
communications equipment.
4
handbook, 2 columns 3 , halfpage 3 4
DESCRIPTION
Enhancement type N-channel
field-effect transistor with source and 1 2
2 1
substrate interconnected. Integrated
diodes between gates and source Top view MSB014 Top view MSB842
protect against excessive input
voltage surges. The BF1101, BF1101 marking code: NDp. BF1101WR marking code: NC.
BF1101R and BF1101WR are
encapsulated in the SOT143B, Fig.1 Simplified outline Fig.3 Simplified outline
SOT143R and SOT343R plastic (SOT143B). (SOT343R).
packages respectively.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VDS drain-source voltage 7 V
ID drain current 30 mA
Ptot total power dissipation 200 mW
yfs forward transfer admittance 25 30 mS
Cig1-ss input capacitance at gate 1 2.2 2.7 pF
Crss reverse transfer capacitance f = 1 MHz 25 35 fF
F noise figure f = 800 MHz 1.7 2.5 dB
Xmod cross-modulation input level for k = 1% at 100 dBV
40 dB AGC
Tj operating junction temperature 150 C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
1999 May 14 2
NXP Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1101; BF1101R; BF1101WR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 7 V
ID drain current 30 mA
IG1 gate 1 current 10 mA
IG2 gate 2 current 10 mA
Ptot total power dissipation Ts 110 C; note 1 200 mW
Tstg storage temperature 65 +150 C
Tj operating junction temperature +150 C
Note
1. Ts is the temperature of the soldering point of the source lead.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
Rth j-s thermal resistance from junction to soldering point 200 K/W
MGL615
250
handbook, halfpage
Ptot
(mW)
200
150
100
50
0
0 50 100 150 200
Ts (