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BCV61
NPN general-purpose double transistors
Rev. 04 -- 18 December 2009 Product data sheet
1. Product profile
1.1 General description
NPN general-purpose double transistors in a small SOT143B Surface-Mounted
Device (SMD) plastic package.
Table 1. Product overview
Type number Package PNP complement
NXP JEITA
BCV61 SOT143B - BCV62
BCV61A BCV62A
BCV61B BCV62B
BCV61C BCV62C
1.2 Features
Low current (max. 100 mA)
Low voltage (max. 30 V)
Matched pairs
1.3 Applications
Applications with working point independent of temperature
Current mirrors
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 collector TR2;
base TR1 and TR2 4 3 4 3
2 collector TR1
TR2 TR1
3 emitter TR1
4 emitter TR2 1 2
1 2
006aaa842
NXP Semiconductors BCV61
NPN general-purpose double transistors
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
BCV61 - plastic surface-mounted package; 4 leads SOT143B
BCV61A
BCV61B
BCV61C
4. Marking
Table 4. Marking codes
Type number Marking code[1]
BCV61 1M*
BCV61A 1J*
BCV61B 1K*
BCV61C 1L*
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
VCBO collector-base voltage open emitter - 30 V
VCEO collector-emitter voltage open base - 30 V
VEBS emitter-base voltage VCE = 0 V - 6 V
IC collector current - 100 mA
ICM peak collector current - 200 mA
IBM peak base current - 200 mA
Per device
Ptot total power dissipation Tamb 25