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S9014
NPN General Purpose Transistors
TO-92
1. EMITTER 1
2. BASE 2
3
3. COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 45 Vdc
Collector-Base Voltage VCBO 50 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Current IC 100 mAdc
Total Device Dissipation TA=25 C PD 0.4 W
Junction Temperature Tj 150 C
Storage, Temperature Tstg -55 to +150 C
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (IC= 0.1 mAdc, IB=0) V(BR)CEO 45 - Vdc
Collector-Base Breakdown Voltage (IC= 100uAdc, IB=0) V(BR)CBO 50 - Vdc
Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0) V(BR)EBO 5.0 - Vdc
Collector Cutoff Current (VCB= 50 Vdc, IE=0) ICBO - 0.1 uAdc
Emitter Cutoff Current (VEB= 3.0V d c, I C=0) IEBO - 0.1 uAdc
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S9014 WEITRON
Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min Max Unit
On Characteristics
DC Current Gain
(IC= 1mAdc, VCE=5Vdc) HFE 60 1000 -
Collector-Emitter Saturation Voltage
VCE(sat) - 0.3 Vdc
(IC= 100 mAdc, IB= 5 mAdc)
Base-Emitter Saturation Voltage
VBE(sat) - 1 Vdc
(IC= 100 mAdc, IB= 5 mAdc)
Transition Frequency
fT 150 - MHz
(IC= 10 mAdc, VCE= 5 Vdc, f=30MHz)
CLASSIFICATION OF hFE
Rank A B C D
Range 60-150 100-300 200-600 400-1000
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S9014
FIG.1
FIG.2
FIG.3 FIG.4
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S9014
TO-92 Outline Dimensions unit:mm
E
TO-92
H
Dim Min Max
C A 3.30 3.70
B 1.10 1.40
C 0.38 0.55
D 0.36 0.51
L
E 4.40 4.70
G 3.43 -
H 4.30 4.70
J
J 1.270TYP
K
K 2.44 2.64
G
L 14.10 14.50
B
A
D
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