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SEMICONDUCTOR KTB1234T
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
DRIVER APPLICATIONS.
FEATURES E
AF amplifier, solenoid drivers, LED drivers. K B
DIM MILLIMETERS
Darlington connection. A _
2.9 + 0.2
High DC current gain. B 1.6+0.2/-0.1
C _
0.70 + 0.05
2
Very small-sized package permitting sets to be made
G
3 _
D 0.4 + 0.1
D
A
F
E 2.8+0.2/-0.3
smaller and slimer. F _
1.9 + 0.2
G
1
Complementary to KTD1854T. G 0.95
H _
0.16 + 0.05
I 0.00-0.10
J 0.25+0.25/-0.15
K 0.60
C
L
L 0.55
MAXIMUM RATINGS (Ta=25 )
I
H
J J
CHARACTERISTIC SYMBOL RATING UNIT
1. EMITTER
Collector-Base Voltage VCBO -80 V 2. BASE
3. COLLECTOR
Collector-Emitter Voltage VCEO -50 V
Emitter-Base Voltage VEBO -10 V
DC IC -200
Collector Current mA TSM
Pulse ICP -400
Collector Power Dissipation PC * 0.9 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
* Package mounted on a ceramic board (600 0.8 )
Marking
EQUIVALENT CIRCUIT
Lot No.
COLLECTOR
Type Name
SY
BASE
EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-60V, IE=0 - - -100 nA
Emitter Cut-off Current IEBO VEB=-8V, IC=0 - - -100 nA
Collector-Base Breakdown Voltage V(BR)CBO IC=-10 A, IE=0 -80 V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA, IB=0 -50 V
Emitter-Base Breakdown Voltage V(BR)EBO IC=-10 A, IC=0 -10 V
hFE 1 VCE=-2V, IC=-10mA 5000 - -
DC Current Gain
hFE 2 VCE=-2V, IC=-100mA 3000 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=-100mA, IB=-100 A - -0.9 -1.5 V
Base-Emitter Saturation Voltage VBE(sat) IC=-100mA, IB=-100 A - -1.5 -2.0 V
2001. 10. 23 Revision No : 0 1/2
KTB1234T
I C - V CE h FE - I C
-100 100K
-7