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SEMICONDUCTOR KMA4D5P20X
TECHNICAL DATA P-CH Trench MOSFET

General Description
It s mainly suitable for battery pack or power management in cell phone,
and PDA.

FEATURES
VDSS=-20V, ID=-4.5A.
Drain-Source ON Resistance.
: RDS(ON)=60m (Max.) @ VGS=-4.5V,.ID=-4.5A
: RDS(ON)=110m (Max.) @ VGS=-2.5V,.ID=-3.3A
Super High Dense Cell Design for Extremely Low RDS(ON)

MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSS -20 V
Gate-Source Voltage VGSS 12 V
DC ID * 4.5
Drain Current A
Pulsed IDP* 16
Continuous Source Current IS -1.3 A
Ta=25 2.0
Drain Power Dissipation PD * W
Ta=70 1.3
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Resistance, Junction to Ambient RthJA * 62.5 /W
* : Surface Mounted on 1 1 FR4 Board, t 5sec.

2007. 3. 22 Revision No : 2 1/5
KMA4D5P20X

ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=-250 A, VGS=0V -20 - - V
VGS=0V, VDS=-20V - - -1
Drain Cut-off Current IDSS A
VGS=0V,VDS=-16V, Tj=70 (Note - - -5
Gate Threshold Voltage Vth VDS=VGS, ID=-250 A -0.6 - -1.3 V
Gate Leakage Current IGSS VGS= 12V, VDS=0V - - 100 nA
VGS=-4.5V, ID=-4.5A (Note 2) - 49 60
Drain-Source ON Resistance RDS(ON) m
VGS=-2.5V, ID=-3.3A (Note 2) - 85 110
Forward Transconductance gfs VDS=-5V, ID=-4.5A (Note 2) - 7 - S
Dynamic (Note 3)

Total Gate Charge Qg VDS=-10V, RD=2.2 - 8.5 -
Gate-Source Charge Qgs VGS=-4.5V - 1.8 - nC
Gate-Drain Charge Qgd (Fig.1) - 2.9 -
Turn-on Delay time td(on) - 12 -
VDS=-10V, RD=2.2
Turn-on Rise time tr - 32 -
VGS=-4.5V RG=6 ns
Turn-off Delay time td(off) - 64 -
(Fig.2)
Turn-off Fall time tf - 40 -
Source-Drain Diode Ratings
Continuous Source Current IS VGS < Vth (Note 1) - - -1.3 A
Diode Forward Voltage VSD IS=-4.5A, VGS=0V (Note 2) - - -1.3 V
Note 1) Based on thermal dissipation from junction to ambient while mounted on a 1 1 FR4 Board.
Note 2) Pulse test : Pulse width 300 , Duty Cycle 2%
Note 3) Guaranteed by design, not subject to production testing.

2007. 3. 22 Revision No : 2 2/5
KMA4D5P20X

2007. 3. 22 Revision No : 2 3/5
KMA4D5P20X

2007. 3. 22 Revision No : 2 4/5
KMA4D5P20X

2007. 3. 22 Revision No : 2 5/5