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MMBTA06WT1G
Driver Transistor
NPN Silicon
Moisture Sensitivity Level: 1
ESD Rating: Human Body Model - 4 kV
ESD Rating: Machine Model - 400 V http://onsemi.com
Features COLLECTOR
These Devices are Pb-- Free, Halogen Free/BFR Free and are RoHS 3
Compliant
1
BASE
2
MAXIMUM RATINGS
EMITTER
Rating Symbol Value Unit
Collector - Emitter Voltage
- VCEO 80 Vdc 3
Collector - Base Voltage
- VCBO 80 Vdc
1
Emitter - Base Voltage
- VEBO 4.0 Vdc 2
-
Collector Current - Continuous IC 500 mAdc SC- 70
-
CASE 419
THERMAL CHARACTERISTICS
STYLE 3
Characteristic Symbol Max Unit
MARKING DIAGRAM
Total Device Dissipation FR- Board
-5 PD 150 mW
TA = 25C
Thermal Resistance, RJA 833 C/W GM MG
Junction to Ambient G
Junction and Storage Temperature TJ, Tstg - 55 to
- C 1
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum GM = Specific Device Code
Ratings are stress ratings only. Functional operation above the Recommended M = Date Code
Operating Conditions is not implied. Extended exposure to stresses above the G = Pb-
-Free Package
Recommended Operating Conditions may affect device reliability.
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
ORDERING INFORMATION
Device Package Shipping
MMBTA06WT1G SC--70 3000/Tape & Reel
(Pb-
-Free)
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2010 1 Publication Order Number:
October, 2010 - Rev. 2 MMBTA06WT1/D
MMBTA06WT1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
-
Collector - Emitter Breakdown Voltage (Note 1) V(BR)CEO 80 -
- Vdc
(IC = 1.0 mAdc, IB = 0)
-
Emitter - Base Breakdown Voltage V(BR)EBO 4.0 -
- Vdc
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current ICES -
- 0.1 mAdc
(VCE = 60 Vdc, IB = 0)
Collector Cutoff Current ICBO mAdc
(VCB = 80 Vdc, IE = 0) -
- 0.1
ON CHARACTERISTICS
DC Current Gain hFE -
-
(IC = 10 mAdc, VCE = 1.0 Vdc) 100 -
-
(IC = 100 mAdc, VCE = 1.0 Vdc) 100 -
-
Collector - Emitter Saturation Voltage
- VCE(sat) -
- 0.25 Vdc
(IC = 100 mAdc, IB = 10 mAdc)
Base - Emitter On Voltage
- VBE(on) -
- 1.2 Vdc
(IC = 100 mAdc, VCE = 1.0 Vdc)
SMALL- SIGNAL CHARACTERISTICS
-
- -
Current - Gain - Bandwidth Product (Note 2) fT 100 -
- MHz
(IC = 10 mA, VCE = 2.0 V, f = 100 MHz)
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
TURN-- ON TIME TURN-- OFF TIME
- 1.0 V VCC +VBB VCC
+40 V +40 V
5.0 ms 100 RL 100 RL
+10 V OUTPUT OUTPUT
Vin RB Vin RB
0
tr = 3.0 ns * CS < 6.0 pF * CS < 6.0 pF
5.0 mF 5.0 mF
100 100
5.0 ms
tr = 3.0 ns
*Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
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MMBTA06WT1G
f T , CURRENT-- GAIN - BANDWIDTH PRODUCT (MHz
300 80
VCE = 2.0 V TJ = 25C
60
200 TJ = 25C
40
C, CAPACITANCE (pF)
Cibo
100 20
70
10
50 8.0
6.0 Cobo
30 4.0
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Current-
-Gain -- Bandwidth Product Figure 3. Capacitance
1.0 k 1.0 k
700 700 100 ms
500 500
I C , COLLECTOR CURRENT (mA) 1.0 ms
ts
300 300 1.0 s
200 200 TC = 25C
t, TIME (ns)
TA = 25C
100 100
70 tf 70
50 50 CURRENT LIMIT
VCC = 40 V THERMAL LIMIT
30 IC/IB = 10 tr 30
SECOND BREAKDOWN LIMIT
20 IB1 = IB2 20
TJ = 25C td @ VBE(off) = 0.5 V
10 10
5.0 7.0 10 20 30 50 70 100 200 300 500 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR-- EMITTER VOLTAGE (VOLTS)
Figure 4. Switching Time
Figure 5. Active-
-Region Safe Operating Area
400 1.0
TJ = 25C
TJ = 125C
VCE = 1.0 V 0.8 VBE(sat) @ IC/IB = 10
200
h FE , DC CURRENT GAIN
V, VOLTAGE (VOLTS)
25C
0.6
VBE(on) @ VCE = 1.0 V
- 55C
100 0.4
80
60 0.2
VCE(sat) @ IC/IB = 10
40 0
0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 0.5 1.0 2.0 5.0 10 20 50 100 200 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 6. DC Current Gain Figure 7. "ON" Voltages
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MMBTA06WT1G
1.0 - 0.8
VCE , COLLECTOR-- EMITTER VOLTAGE (VOLTS)
R VB , TEMPERATURE COEFFICIENT (mV/ C)
TJ = 25C
0.8 - 1.2
IC = IC = IC = IC =
50 mA 100 mA 250 mA 500 mA
0.6 - 1.6
0.4 - 2.0 RVB for VBE
IC =
0.2 10 mA - 2.4
0 - 2.8
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 0.5 1.0 2.0 5.0 10 20 50 100 200 500
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 8. Collector Saturation Region Figure 9. Base-
-Emitter Temperature
Coefficient
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MMBTA06WT1G
PACKAGE DIMENSIONS
SC-
-70 (SOT--323)
CASE 419--04
ISSUE N
NOTES:
D 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
e1 2. CONTROLLING DIMENSION: INCH.
MILLIMETERS INCHES
3 DIM MIN NOM MAX MIN NOM MAX
A 0.80 0.90 1.00 0.032 0.035 0.040
HE E A1 0.00 0.05 0.10 0.000 0.002 0.004
1 2 A2 0.70 REF 0.028 REF
b 0.30 0.35 0.40 0.012 0.014 0.016
c 0.10 0.18 0.25 0.004 0.007 0.010
D 1.80 2.10 2.20 0.071 0.083 0.087
b E 1.15 1.24 1.35 0.045 0.049 0.053
e 1.20 1.30 1.40 0.047 0.051 0.055
e e1 0.65 BSC 0.026 BSC
L 0.20 0.38 0.56 0.008 0.015 0.022
HE 2.00 2.10 2.40 0.079 0.083 0.095
STYLE 3:
c
A A2 PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.05 (0.002) L
A1
SOLDERING FOOTPRINT*
0.65
0.65 0.025
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1 inches
mm
*For additional information on our Pb-
-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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