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2SC388(NPN)
TO-92 Bipolar Transistors

TO-92
1. EMITTER

2. COLLECTOR

3. BASE

Features
TV final pictureif amplifier applications

MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Emitter Voltage 30 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 4 V
IC Collector Current -Continuous 50 mA
Dimensions in inches and (millimeters)
Pc Collector Power dissipation 300 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO Ic=10A,IE=0 30 V

Collector-emitter breakdown voltage V(BR)CEO Ic=5mA,IB=0 25 V

Emitter-base breakdown voltage V(BR)EBO IE=10A,IC=0 4 V

Collector cut-off current ICBO VCB=30V,IE=0 0.1 A

Emitter cut-off current IEBO VEB=3V,IC=0 0.1 A

DC current gain hFE(1) VCE=12.5V,IC=12.5mA 20 200

Collector-emitter saturation voltage VCE(sat) IC=15mA,IB=1.5mA 0.2 V

Base-emitter saturation voltage VBE(sat) IC=15mA,IB=1.5mA 1.2 V

Transition frequency fT VCE=12.5V,IC=12.5mA 300 MHz

Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 0.8 2 pF

VCC=12.5V,IE=-12.5mA,
Power Gain Gpe 28 36 dB
f=45MHZ
2SC388(NPN)
TO-92 Bipolar Transistors

Typical Characteristics