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High Voltage, High Gain IXBH 10N170 VCES = 1700 V
BIMOSFET Monolithic TM
IXBT 10N170 IC25 = 20 A
Bipolar MOS Transistor VCE(sat) = 3.8 V
Preliminary Data Sheet

Symbol Test Conditions Maximum Ratings TO-268 (IXBT)
VCES TJ = 25