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SI2312
20V N-Channel Enhancement Mode MOSFET

VDS= 20V
RDS(ON), [email protected], [email protected] < 31m
RDS(ON), [email protected], [email protected] < 37m
RDS(ON), [email protected], [email protected] < 85m

Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance

Package Dimensions

D

SOT-23-3L
G S

Millimeter Millimeter
REF. REF.
Min. Max. Min. Max.
A 2.70 3.10 G 1.90 REF.
B 2.65 2.95 H 1.00 1.30
C 1.50 1.70 K 0.10 0.20
D 0.35 0.50 J 0.40 -
E 0 0.10 L 0.85 1.15
F 0.45 0.55 M 0