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M.tec TBS6416B4E
1M x 16Bit x 4 Banks synchronous DRAM
GENERAL DESCRIPTION
The TBS6416B4E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,
fabricated with M'tec high performance CMOS technology. Synchronous design allows precise cycle control with the use of
system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and
programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system
applications.
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