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PT9926
20V Dual N-Channel Enhancement Mode MOSFET

VDS= 20V
RDS(ON), [email protected], [email protected] <40m
RDS(ON), [email protected], Ids@6A < 30m

Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
High Power and Current handing capability
Ideal for Li ion battery pack applications

Package Dimensions

Millimeter Millimeter
REF. REF.
Min. Max. Min. Max.
A 5.80 6.20 M 0.10 0.25
B 4.80 5.00 H 0.31 0.51
C 3.80 4.00 L 1.35 1.75
D 0