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G ui l i n St ro n g Mi c ro - E le c t ro n i c s Co . , Lt d .
ro- Ele
GMB772
SOT-89 (SOT-89 transistors)
(Ta=25)
(T
CHARACTERISTIC Symbol Rating Unit
Collector-Base Voltage
VCBO -40 V
-
Collect-Emitter Voltage
VCEO -30 V
-
Emitter-Base Voltage
VEBO -5.0 V
-
Collector Current DC
Ic -3.0 A
-
Collector Current pulse
Ic -7.0 A
-
Collector Power Dissipation
PC 0.5 W
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55150
HFE RANGE
60-120 100-200 160-320 200~400
200~400
G ui l i n St ro n g Mi c ro - E le c t ro n i c s Co . , Lt d .
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GMB772
ELECTRICAL CHARACTERISTICS
(TA=25 unless otherwise noted 25)
=25
Characteristic Symbol Test Condition Min TYP Max Unit
Collector Cutoff Current VCB=-30V, --
ICBO -- -1.0 A
IE=0
Emitter Cutoff Current
IEBO VEB=-5V,IC=0 -- -- -1.0 A
Collector-Base Breakdown Voltage
V(BR)CBO IC=-100A -40 -- -- V
-
Collector-Emitter Breakdown Voltage
V(BR)CEO IC=-10mA -30 -- -- V
-
Emitter-Base Breakdown Voltage
V(BR)EBO IE=-100A -5 -- -- V
-
DC Current Gain VCE=-2V,
HFE 60 -- 400 --
IC=-1A
Collector Saturation Voltage IC=-2A, IB=-
VCE(sat) -- -- -0.5 V
200mA
Base Saturation Voltage IC=-2A, IB=-
VBE(sat) -- -- -1.5 V
200mA
Transition Frequency VCE=-5V,
fT -- 80 -- MHz
IC=-100mA
Collector Output Capacitance VCB=-10V,
Cob -- 55 -- pF
IE=0,f=1MHz
G ui l i n St ro n g Mi c ro - E le c t ro n i c s Co . , Lt d .
ro- Ele
GMB772
(DIMENSION)
(DIMENSION)