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2SB1260
PNP Plastic-Encapsulate Transistor SOT-89
1
2
1. BASE 3
2. COLLECTOR
3. EMITTER
ABSOLUTE MAXIMUM RATINGS (Ta=25% )
C
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO -80 Vdc
Collector-Base Voltage VCBO -80 Vdc
Emitter-Base Voltage VEBO -5.0 Vdc
IC 1.0 Adc(DC)
Collector Current
I CP 2.0 Adc (Pulse)
Collector Power Dissipation PC 0.5 W
Junction Temperature, Storage Temperature T j , Tstg 150, -55 to +150 %
C
Device Marking
2SB1260=ZL
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (IC= -1.0 mAdc, IB=0) V(BR)CEO -80 - Vdc
Collector-Base Breakdown Voltage (IC= -50