3dd13007.pdf part of LGE 3dd13007 3dd13007.pdf, . Electronic Components Datasheets Active components Transistors LGE 3dd13007.pdf text manual preview

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3DD13007(NPN)
TO-220 Transistor

TO-220
1.BASE

2.COLLECTOR

3.EMITTER
3
2
1
Features
power switching applications

MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol Parameter Value Units
VCBO Collector-Base Voltage 700 V
VCEO Collector-Emitter Voltage 400 V Dimensions in inches and (millimeters)
VEBO Emitter-Base Voltage 9 V
IC Collector Current -Continuous 8 A
PC Collector Power Dissipation 2 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 1mA,IE=0 700 V
Collector-emitter breakdown voltage V(BR)CEO IC= 10mA,IB=0 400 V
Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC =0 9 V
Collector cut-off current ICBO VCB= 700V, IE=0 1 mA
Collector cut-off current ICEO VCE= 400V, IB=0 100