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STT3998N
Dual N-Ch Enhancement Mode Mos.FET
Elektronische Bauelemente 3.7 A, 20 V, RDS(ON) 58 m

RoHS Compliant Product
A suffix of "-C" specifies halogen and lead-free
TSOP-6
DESCRIPTION
A
These miniature surface mount MOSFETs utilize a high cell density E
L
trench process to provide low RDS(on) and to ensure minimal power 6 5 4
loss and heat dissipation. Typical applications are DC-DC converters
and power management in portable and battery-powered products
such as computers, printers, PCMCIA cards, cellular and cordless B

telephones.
1 2 3
F C H
FEATURES
DG K J
Low RDS(on) provide higher efficiency and extends battery
life.
Low thermal impedance copper leadframe TSOP-6 saves
board space. REF.
Millimeter
REF.
Millimeter
Min. Max. Min. Max.
Fast switching speed. A 2.70 3.10 G 0 0.10
High performance trench technology. B
C
2.60
1.40
3.00
1.80
H
J
0.60 REF.
0.12 REF.
D 1.10 MAX. K 0