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STT3470N
2.2 A, 100 V, RDS(ON) 280 m
Elektronische Bauelemente N-Channel Enhancement Mode Mos.FET

RoHS Compliant Product
A suffix of "-C" specifies halogen and lead-free
DESCRIPTION TSOP-6
These miniature surface mount MOSFETs utilize A
a High Cell Density trench process to provide Low RDS(on) E
L
and to ensure minimal power loss and heat dissipation. 6 5 4

Typical applications are DC-DC converters and power
management in portable and battery-powered products
such as computers, printers, PCMCIA cards, cellular B

and cordless telephones.
1 2 3
F C H

DG K J
FEATURES
Low RDS(on) provides higher efficiency and extend
battery life
Low thermal impedance copper leadframe TSOP-6 REF.
Millimeter
REF.
Millimeter
Min. Max. Min. Max.
saves board space A 2.70 3.10 G 0 0.10
B 2.60 3.00 H 0.60 REF.
Fast switching speed C 1.40 1.80 J 0.12 REF.
High performance trench technology D 1.10 MAX. K 0