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BF556A; BF556B; BF556C
N-channel silicon junction field-effect transistors
Rev. 03 -- 5 August 2004 Product data sheet

1. Product profile

1.1 General description
N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.

CAUTION
This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken
during transport and handling.

MSC895

1.2 Features
s Low leakage level (typ. 500 fA)
s High gain
s Low cut-off voltage.

1.3 Applications
s Impedance converters in e.g. electret microphones and infrared detectors
s VHF amplifiers in oscillators and mixers.

1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source - -