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MMBT5551
NPN Silicon
Elektronische Bauelemente General Purpose Transistor

RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
SOT-23

A Dim Min Max
L A 2.800 3.040

3
B 1.200 1.400
FEATURES Top View B S C 0.890 1.110
1 2
D 0.370 0.500

Power dissipation V G
G 1.780 2.040
H 0.013 0.100
PCM: 0.3 W (Tamb=25oC) J 0.085 0.177
C
Collector current K 0.450 0.600
D H J L 0.890 1.020
ICM: 0.6 A K
S 2.100 2.500
Collector-base voltage V 0.450 0.600
COLLECTOR
V(BR)CBO: 180 V All Dimension in mm

Operating and storage junction temperature range BASE

EMITTER
TJ, Tstg: -55 to +150oC

ELECTRICAL CHARACTERISTICS (Tamb=25oC unless otherwise specified)

Parameter Symbol Test conditions MIN MAX UNIT

Collector-base breakdown voltage V(BR)CBO Ic= 100