cem4953.pdf part of CET cem4953 cem4953.pdf, . Electronic Components Datasheets Active components Transistors CET cem4953.pdf text manual preview

Text preview for : cem4953.pdf part of CET cem4953 . Electronic Components Datasheets Active components Transistors CET cem4953.pdf

Back to : cem4953.pdf | Home

CEM4953
Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES

-30V, -4.9A, RDS(ON) = 53m @VGS = -10V.
RDS(ON) = 95m @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired. D1 D1 D2 D2
8 7 6 5
Surface mount Package.

SO-8
1 2 3 4
1 S1 G1 S2 G2

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS