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SEMICONDUCTOR KTK5132U
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
E
FEATURES M B M
2.5 Gate Drive. DIM MILLIMETERS
A _
2.00 + 0.20
D
Low Threshold Voltage : Vth=0.5 1.5V. 2 B _
1.25+ 0.15
_
A
C 0.90 + 0.10
J
High Speed. 1 3
G
D 0.3+0.10/-0.05
Small Package. E _
2.10 + 0.20
G 0.65
Enhancement-Mode. H 0.15+0.1/-0.06
J 1.30
K 0.00-0.10
L 0.70
C
H _
L
M 0.42 + 0.10
MAXIMUM RATING (Ta=25 ) N 0.10 MIN
N K N
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDS 30 V 1. SOURCE
Gate-Source Voltage VGSS