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BC546/BC547/BC548(NPN)
TO-92 Bipolar Transistors
TO-92
1. COLLECTOR
2. BASE
3. EMITTER
Features
High Voltage
Complement to BC556,BC557,BC558
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
Collector-Base Voltage BC546 80
VCBO BC547 50
V
BC548 30
Collector-Emitter Voltage BC546 65
VCEO BC547 45 V
BC548 30
Dimensions in inches and (millimeters)
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 100 mA
PD Total Device Dissipation 625 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage BC546 80
BC547 VCBO IC= 100A , IE=0 50 V
BC548 30
Collector-emitter breakdown voltage BC546 65
BC547 VCEO IC= 1mA , IB=0 45 V
BC548 30
Emitter-base breakdown voltage VEBO IE= 10A, IC=0 6 V
Collector cut-off current BC546 VCB= 70V, IE=0
0.1
BC547 ICBO VCB= 50 V, IE=0 A
BC548 VCB= 30V, IE=0
Collector cut-off current BC546 VCE= 60 V, IB=0
BC547 ICEO VCE= 45 V, IB=0 0.1 A
BC548 VCE= 30 V, IB=0
Emitter cut-off current BC546
BC547 IEBO VEB= 5V, IC=0 0.1 A
BC548
DC current gain BC546 110 800
BC547 110 800
BC548 hFE VCE=5V, IC= 2mA 110 800
BC546A/BC547A/BC548A 110 220
BC546B/BC547B/BC548B 200 450
BC546C/BC547C/BC548C 420 800
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 5mA 0.3 V
Base-emitter saturation voltage VBE(sat) IC= 100mA, IB=5mA 1.1 V
VCE= 5V, IC= 10mA
Transition frequency fT 150 MHz
f = 100MHz
BC546/BC547/BC548(NPN)
TO-92 Bipolar Transistors
Typical Characteristics
BC546/BC547/BC548(NPN)
TO-92 Bipolar Transistors