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BUL138FP
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s NPN TRANSISTOR
s HIGH VOLTAGE CAPABILITY
s LOW SPREAD OF DYNAMIC PARAMETERS
s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s VERY HIGH SWITCHING SPEED
s FULLY CHARACTERIZED AT 125oC
3
2
APPLICATIONS 1
s ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
s FLYBACK AND FORWARD SINGLE TO-220FP
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The BUL138FP is manufactured using high
voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It INTERNAL SCHEMATIC DIAGRAM
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V CES Collector-Emitter Voltage (V BE = 0) 800 V
V CEO Collector-Emitter Voltage (I B = 0) 400 V
V EBO Emitter-Base Voltage (I C = 0) 9 V
IC Collector Current 5 A
I CM Collector Peak Current (tp < 5 ms) 10 A
IB Base Current 2 A
I BM Base Peak Current (t p < 5 ms) 4 A
o
P t ot Total Dissipation at T c = 25 C 33 W
o
T stg St orage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
April 1998 1/6
BUL138FP
THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-case Max 3.8 C/W
o
R t hj- amb Thermal Resistance Junction-ambient Max 62.5 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CES Collector Cut-off V CE = 800 V 100