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PBHV9115X
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
Rev. 01 -- 10 March 2010 Product data sheet




1. Product profile

1.1 General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a
SOT89 (SC-62/TO-243) small and flat Surface-Mounted Device (SMD) plastic package.

1.2 Features and benefits
High voltage
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC

1.3 Applications
LED driver for LED chain module
LCD backlighting
Automotive motor management
Hook switch for wired telecom
Switch Mode Power Supply (SMPS)

1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - -150 V
IC collector current - - -1 A
hFE DC current gain VCE = -10 V; 100 220 -
IC = -50 mA


2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 emitter
2
2 collector
3 base 3

1
3 2 1 sym079
NXP Semiconductors PBHV9115X
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor



3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
PBHV9115X SC-62 plastic surface-mounted package; collector pad for good SOT89
heat transfer; 3 leads


4. Marking
Table 4. Marking codes
Type number Marking code[1]
PBHV9115X *4G

[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China


5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - -200 V
VCEO collector-emitter voltage open base - -150 V
VCESM collector-emitter peak VBE = 0 V - -200 V
voltage
VEBO emitter-base voltage open collector - -6 V
IC collector current - -1 A
ICM peak collector current single pulse; - -2 A
tp 1 ms
IBM peak base current single pulse; - -400 mA
tp 1 ms
Ptot total power dissipation Tamb 25