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CEM6659
Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY

FEATURES
5
60V, 4.1A, RDS(ON) = 68m @VGS = 10V.
RDS(ON) = 86m @VGS = 4.5V.
-60V, -3.1A, RDS(ON) = 130m @VGS = -10V.
RDS(ON) = 170m @VGS = -4.5V.

Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2
8 7 6 5
High power and current handing capability.

Lead free product is acquired.

Surface mount Package.

SO-8 1 2 3 4
1 S1 G1 S2 G2

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol N-Channel P-Channel Units
Drain-Source Voltage VDS 60 -60 V
Gate-Source Voltage VGS