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SEMICONDUCTOR KU310N10P
TECHNICAL DATA N-ch Trench MOS FET
General Description
This Trench MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for DC/DC Converter,
Synchronous Rectification and a load switch in battery powered
applications
FEATURES
VDSS= 100V, ID= 34A
Drain-Source ON Resistance :
RDS(ON)=31m (Max.) @VGS = 10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSS 100 V
Gate-Source Voltage VGSS 20 V
@TC=25 34
ID
Drain Current @TC=100 21.5 A
Pulsed (Note1) IDP 110*
Single Pulsed Avalanche Energy EAS 60 mJ
(Note 2)
Repetitive Avalanche Energy EAR 2.3 mJ
(Note 1)
Peak Diode Recovery dv/dt
dv/dt 4.5 V/ns
(Note 3)
Drain Power Tc=25 83.3 W
PD
Dissipation Derate above 25 0.67 W/
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 ~ 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 1.5 /W
Thermal Resistance,
RthJA 62.5 /W
Junction-to-Ambient
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
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KU310N10P
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 100 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=5mA, Referenced to 25 - 0.10 - V/
Drain Cut-off Current IDSS VDS=100V, VGS=0V, - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.0 - 4.0 V
Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=17A - 25 31 m
Dynamic
Total Gate Charge Qg - 49 -
VDS=80V, ID=34A
Gate-Source Charge Qgs - 10 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 14 -
Turn-on Delay time td(on) - 30 -
VDD=50V
Turn-on Rise time tr - 32 -
ID=34A ns
Turn-off Delay time td(off) - 115 -
RG=25 (Note4,5)
Turn-off Fall time tf - 40 -
Input Capacitance Ciss - 2230 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 170 - pF
Reverse Transfer Capacitance Crss - 85 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 34
VGS Pulsed Source Current ISP - - 136
Diode Forward Voltage VSD IS=34A, VGS=0V - - 1.4 V
Reverse Recovery Time trr IS=34A, VGS=0V, - 53 - ns
Reverse Recovery Charge Qrr dIs/dt=300A/ s - 0.11 - C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =35 H, IS=34A, VDD=80V, RG=25 , Starting Tj=25 .
Note 3) IS 34A, dI/dt 200A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking
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