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BLF888
UHF power LDMOS transistor
Rev. 5 -- 21 January 2011 Product data sheet
1. Product profile
1.1 General description
A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor is optimized for digital applications and can deliver 110 W
average DVB-T broadband over the full UHF band from 470 MHz to 860 MHz. The
excellent ruggedness of this device makes it ideal for digital transmitter applications.
Table 1. Application information
RF performance at VDS = 50 V in a common source 860 MHz narrowband test circuit unless
otherwise specified.
Mode of operation f PL(PEP) PL(AV) Gp D IMD3 IMDshldr
(MHz) (W) (W) (dB) (%) (dBc) (dBc)
2-Tone, class AB f1 = 860; f2 = 860.1 500 250 19 46 32 -
DVB-T (8k OFDM) 858 - 110 19 31 - 31 [1]
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent
drain current IDq = 1.3 A:
Peak envelope power load power = 500 W
Power gain = 19 dB
Drain efficiency = 46 %
Third order intermodulation distortion = 32 dBc
DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent
drain current IDq = 1.3 A:
Average output power = 110 W
Power gain = 19 dB
Drain efficiency = 31 %
Shoulder distance = 31 dBc (4.3 MHz from center frequency)
Integrated ESD protection
Advanced flange material for optimum thermal behavior and reliability
NXP Semiconductors BLF888
UHF power LDMOS transistor
Excellent ruggedness
High power gain
High efficiency
Designed for broadband operation (470 MHz to 860 MHz)
Excellent reliability
Internal input matching for high gain and optimum broadband operation
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Communication transmitter applications in the UHF band
Industrial applications in the UHF band
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 drain1
1 2 1
2 drain2
3 gate1 5
3
4 gate2 3 4 5
4
5 source [1]
2
sym117
[1] Connected to flange.
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
BLF888 - flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT979A
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 104 V
VGS gate-source voltage 0.5 +11 V
Tstg storage temperature 65 +150 C
Tj junction temperature - 200 C
BLF888 All information provided in this document is subject to legal disclaimers.