Text preview for : b772s.pdf part of LGE b772s . Electronic Components Datasheets Active components Transistors LGE b772s.pdf
Back to : b772s.pdf | Home
B772S
Transistor(PNP)
1. EMITTER
TO-92
2. COLLECTOR
3 BASE
Features
Low speed switching
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -30 V
VEBO Emitter-Base Voltage -6 V
Dimensions in inches and (millimeters)
IC Collector Current -Continuous -3 A
PC Collector Power Dissipation 0.625 W
RJA Thermal Resistance, junction to Ambient 500 /W
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100A ,IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC= -10mA , IB=0 -30 V
Emitter-base breakdown voltage V(BR)EBO IE= -100A,IC=0 -6 V
Collector cut-off current ICBO VCB= -40V, IE=0 -1 A
Collector cut-off current ICEO VCE=-30V, IB=0 -10 A
Emitter cut-off current IEBO VEB=-6V, IC=0 -1 A
DC current gain hFE VCE= -2V, IC= -1A 60 400
Collector-emitter saturation voltage VCE(sat) IC=-2A, IB= -0.2A -0.5 V
Base-emitter saturation voltage VBE(sat) IC=-2A, IB= -0.2A -1.5 V
VCE= -5V, IC=-0.1A
Transition frequency fT 50 80 MHz
f =10MHz
CLASSIFICATION OF hFE
Rank R O Y GR
Range 60-120 100-200 160-320 200-400
B772S
Transistor(PNP)
Typical characteristics