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STD70N2LH5
STU70N2LH5
N-channel 25 V, 0.006 48 A - DPAK - IPAK
,
STripFETTM V Power MOSFET
Preliminary Data
Features
Type VDSS RDS(on) max ID
STD70N2LH5 25 V 0.0071 48 A
STU70N2LH5 25 V 0.0075 48 A
3 3
2
RDS(on) * Qg industry benchmark 1 1
Extremely low on-resistance RDS(on)
DPAK IPAK
Very low switching gate charge
High avalanche ruggedness
Low gate drive power losses
Application
Switching applications
Figure 1. Internal schematic diagram
Description
This product utilizes the 5th generation of design
rules of ST's proprietary STripFETTM technology.
The lowest available RDS(on)*Qg, in the standard
packages, makes this device suitable for the most
demanding DC-DC converter applications, where
high power density is to be achieved.
Table 1. Device summary
Order codes Marking Package Packaging
STD70N2LH5 70N2LH5 DPAK Tape & reel
STU70N2LH5 70N2LH5 IPAK Tube
September 2008 Rev 2 1/12
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 12
change without notice.
Electrical ratings STD70N2LH5 - STU70N2LH5
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS=0) 25 V
VGS Gate-Source voltage