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2SC2717(NPN)
TO-92 Bipolar Transistors
1. BASE
TO-92
2. EMITTER
3. COLLECTOR
Features
High Gain: Gpe =33 dB ( Typ. ) ( f =45MHZ)
Good Linearity of hFE.
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 30 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 4 V Dimensions in inches and (millimeters)
IC Collector Current -Continuous 50 mA
PC Collector Power Dissipation 300 mW
Tj Junction Temperature 125
Tstg Storage Temperature -55-125
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 30 V
Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE=100A,IC=0 4 V
Collector cut-off current ICBO VCB=30V,IE=0 0.1 A
Emitter cut-off current IEBO VEB=3V,IC=0 0.1 A
DC current gain hFE VCE=12.5V,IC=12.5mA 40 240
Collector-emitter saturation voltage VCE(sat) IC=15mA,IB=1.5mA 0.2 V
Base-emitter saturation voltage VBE(sat) IC=15mA,IB=1.5mA 1.5 V
Transition frequency fT VCE=12.5V,IC=12.5mA 300 MHz
Collector output capacitance Cob VCB=10V,IE=0,f=30MHz 0.8 2.0 pF
.rbb'
Collector-base time constant CC VCB=10V,IE=-1mA,f=30MHz 25 ps
Power gain (fig.) Gpe VCC=12.5V,IE=-12.5mA,f=45MHz 28 36 dB
2SC2717(NPN)
TO-92 Bipolar Transistors
Typical Characteristics
2SC2717(NPN)
TO-92 Bipolar Transistors