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2SC1162(NPN)
TO-126 Transistor
TO-126
1. EMITTER
2.500
7.400
7.800 1.100 2.900
2. COLLECOTR 1.500
3.900
3. BASE 3.000
4.100
3.200
3 10.60 0 0.000
2 11.00 0 0.300
1
2.100
Features 2.300
1.170
1.370
Low frequency power amplifier 15.30 0
15.70 0
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units 0.660
0.860
VCBO Collector-Emitter Voltage 35 V 0.450
0.600
2.290 TYP
VCEO Collector-Emitter Voltage 35 V 4.480
4.680
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 2.5 A Dimensions in inches and (millimeters)
Pc Collector Power Dissipation 0.75 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC =1mA,IE=0 35 V
Collector-emitter breakdown voltage V(BR)CEO IC =10mA,IB=0 35 V
Emitter-base breakdown voltage V(BR)EBO IE=1mA ,IC=0 5 V
Collector cut-off current ICBO VCB=35V,IE=0 20 A
Emitter cut-off current IEBO VEB=5V,IC=0 20 A
hFE1 VCE=2V,IC=0.5A 60 320
DC current gain
hFE2 VCE=2V,IC=1.5A * 20
Collector-emitter saturation voltage VCE(sat) IC=2A,IB=200mA 1 V
Base-collector voltage VBE VCE=2V,IC=1.5A 1.5 V
Transition frequency fT VCE=2V,IC=200mA 180 MHz
*
pulse test
CLASSIFICATION OF hFE1
Rank B C D
Range 60-120 100-200 160-320
2SC1162(NPN)
TO-126 Transistor
Typical Characteristics