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CEM7350
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
100V, 2.6A, RDS(ON) = 190m @VGS = 10V.
-100V, -2.0A, RDS(ON) = 320m @VGS = -10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
D1 D1 D2 D2
Lead free product is acquired. 8 7 6 5
Surface mount Package.
SO-8
1 2 3 4
1 S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol N-Channel P-Channel Units
Drain-Source Voltage VDS 100 -100 V
Gate-Source Voltage VGS