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SEMICONDUCTOR KRC410E~KRC414E
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
E
FEATURES B
With Built-in Bias Resistors. DIM MILLIMETERS
A _
1.60 + 0.10
D
Simplify Circuit Design. 2 B _
0.85 + 0.10
_
G
0.70 + 0.10
A
Reduce a Quantity of Parts and Manufacturing Process. C
1 3
H
D 0.27+0.10/-0.05
High Packing Density. E _
1.60 + 0.10
G _
1.00 + 0.10
H 0.50
J _
0.13 + 0.05
EQUIVALENT CIRCUIT
J
C
C
R1
B 1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
E
ESM
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 50 V Collector Power Dissipation PC 100 mW
Collector-Emitter Voltage VCEO 50 V Junction Temperature Tj 150
Emitter-Base Voltage VEBO 5 V Storage Temperature Range Tstg -55 150
Collector Current IC 100 mA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=50V, IE=0 - - 100 nA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA
DC Current Gain hFE VCE=5V, IC=1mA 120 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=0.5mA - 0.1 0.3 V
Transition Frequency fT * VCE=10V, IC=5mA - 250 - MHz
KRC410E 3.29 4.7 6.11
KRC411E 7 10 13
Input Resistor KRC412E R1 70 100 130 k
KRC413E 15.4 22 28.6
KRC414E 32.9 47 61.1
Marking
Type Name
MARK SPEC
TYPE KRC410E KRC411E KRC412E KRC413E KRC414E
MARK NK NM NN NO NP
2008. 11. 20 Revision No : 2 1/4
KRC410E~KRC414E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
KRC410E - 0.025 -
KRC411E - 0.03 -
Rise Time KRC412E tr - 0.3 -
KRC413E - 0.06 -
KRC414E - 0.11 -
KRC410E - 3.0 -
KRC411E VO=5V - 2.0 -
Switching
Storage Time KRC412E tstg VIN=5V - 6.0 - S
Time
KRC413E RL=1k - 4.0 -
KRC414E - 5.0 -
KRC410E - 0.2 -
KRC411E - 0.12 -
Fall Time KRC412E tf - 2.0 -
KRC413E - 0.9 -
KRC414E - 1.4 -
2008. 11. 20 Revision No : 2 2/4
KRC410E~KRC414E
h FE - I C V CE(sat) - I C
KRC410E KRC410E
COLLECTOR-EMITTER SATURATION
2k 2
IC /I B =20
1k 1
DC CURRENT GAIN h FE
VOLTAGE VCE(sat) (V)
500 Ta=100 C 0.5
300 0.3
Ta=25 C
Ta=-25 C
100 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
VCE =5V Ta=-25 C
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
h FE - I C VCE(sat) - I C
KRC411E KRC411E
COLLECTOR-EMITTER SATURATION
2k 2
IC /I B =20
1k 1
DC CURRENT GAIN h FE
VOLTAGE VCE(sat) (V)
500 0.5
300 Ta=100 C 0.3
Ta=25 C
Ta=-25 C
100 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
V CE =5V Ta=-25 C
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
h FE - I C VCE(sat) - I C
KRC412E KRC412E
COLLECTOR-EMITTER SATURATION
2k 2
I C /I B =20
1k 1
VOLTAGE VCE(sat) (V)
DC CURRENT GAIN h FE
500 0.5
300 Ta=100 C 0.3
Ta=25 C
100 Ta=-25 C 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
V CE =5V Ta=-25 C
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
2008. 11. 20 Revision No : 2 3/4
KRC410E~KRC414E
h FE - I C VCE(sat) - I C
KRC413E KRC413E
2k
COLLECTOR-EMITTER SATURATION
2
I C /I B =20
1k 1
DC CURRENT GAIN h FE
VOLTAGE VCE(sat) (V)
500 0.5
300 Ta=100 C 0.3
Ta=25 C
100 Ta=-25 C 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
V CE =5V Ta=-25 C
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
h FE - I C V CE(sat) - I C
KRC414E KRC414E
COLLECTOR-EMITTER SATURATION
2k 2
I C /I B =20
1k 1
DC CURRENT GAIN h FE
VOLTAGE VCE(sat) (V)
500 0.5
300 Ta=100 C 0.3
Ta=25 C
100 Ta=-25 C
0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
Ta=-25 C
VCE =5V
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
2008. 11. 20 Revision No : 2 4/4