Text preview for : ku2307k.pdf part of KEC ku2307k . Electronic Components Datasheets Active components Transistors KEC ku2307k.pdf



Back to : ku2307k.pdf | Home

SEMICONDUCTOR KU2307K
TECHNICAL DATA N-Ch Trench MOSFET


General Description

This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for DC/DC Converter.



FEATURES
VDSS=30V, ID=79A.
Low Drain to Source On-state Resistance.
: RDS(ON)=6.0m (Max.) @ VGS=10V
: RDS(ON)=10.3m (Max.) @ VGS=4.5V




MAXIMUM RATING (Ta=25 Unless otherwise Noted)
CHARACTERISTIC SYMBOL RATING UNIT
Drain to Source Voltage VDSS 30 V
Gate to Source Voltage VGSS 20 V MARKING
DC@TC=25 (Note1) ID 79
Drain Current A
Pulsed (Note2) IDP 316
Single Pulsed Avalanche Energy (Note3) EAS 203 mJ
@TC=25 (Note1) 62.5
Drain Power Dissipation PD W
@Ta=25 (Note2) 2.5
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Resistance, Junction to Case (Note1) RthJC 2.0 /W
Thermal Resistance, Junction to Ambient (Note2) RthJA 50 /W
Note 1) RthJC means that the infinite heat sink is mounted.
Note 2) Surface Mounted on 1 1 Pad of 2 oz copper.
Note 3) L=32.5 H, IAS=79A, VDD=15V, VGS=10V, Starting Tj=25


PIN CONNECTION (TOP VIEW)




2009. 7. 30 Revision No : 0 1/4
KU2307K

ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain to Source Breakdown Voltage BVDSS VGS=0V, ID=250 A 30 - - V
Drain Cut-off Current IDSS VGS=0V, VDS=30V - - 1 A
Gate to Source Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA
Gate to Source Threshold Voltage Vth VDS=VGS, ID=250 A 1.0 - 3.0 V
VGS=10V, ID=20A (Note4) - 5.0 6.0
Drain to Source On Resistance RDS(ON) m
VGS=4.5V, ID=20A (Note4) - 8.6 10.3
Forward Transconductance gfs VDS=5V, ID=20A (Note4) - 54 - S
Dynamic
Input Capacitance Ciss - 1313 -
Ouput Capacitance Coss VDS=15V, f=1MHz, VGS=0V - 422 - pF
Reverse Transfer Capacitance Crss - 212 -
Gate Resistance Rg f=1MHz - 1.1 -
VGS=10V Qg - 24.6 -
Total Gate Charge
VGS=4.5V Qg - 13.1 -
VDS=15V, VGS=10V, ID=20A (Note4) nC
Gate to Source Charge Qgs - 3.3 -
Gate to Drain Charge Qgd - 7.1 -
Turn-On Delay Time td(on) - 6.5 -
Turn-On Rise Time tr VDD=15V, VGS=10V - 8.3 -
ns
Turn-Off Delay Time td(off) ID=20A, RG=1.6 (Note4) - 24.0 -
Turn-Off Fall Time tf - 7.0 -
Source to Drain Diode Ratings
Source to Drain Forward Voltage VSD VGS=0V, IS=20A (Note4) - 0.8 1.2 V
Reverse Recovery time trr IS=20A, dI/dt=100A/ (Note4) - 22.0 - ns
Reverse Recovered charge Qrr IS=20A, dI/dt=100A/ (Note4) - 9.40 - nC
Note 4) Pulse Test : Pulse width <300 , Duty cycle < 2%




2009. 7. 30 Revision No : 0 2/4
KU2307K




2009. 7. 30 Revision No : 0 3/4
KU2307K




2009. 7. 30 Revision No : 0 4/4