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R5011ANX
Transistors
10V Drive Nch MOSFET
R5011ANX
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET TO-220FM
10.0 3.2 4.5
2.8
Features
15.0
12.0
1) Low on-resistance.
8.0
2) Fast switching speed. 1.2
2.5
1.3
3) Gate-source voltage (VGSS)
14.0
guaranteed to be 30V. 0.8
4) Drive circuits can be simple. (1)Base
2.54 2.54 0.75 2.6
(2)Collector
5) Parallel use is easy.
(1) (2) (3)
(3)Emitter
Applications
Switching
Packaging specifications Inner circuit
Package Bulk
Type Code -
Basic ordering unit (pieces) 500
R5011ANX 1
Absolute maximum ratings (Ta=25 C)
(1) (2) (3)
Parameter Symbol Limits Unit (1) Gate
(2) Drain
Drain-source voltage VDSS 500 V 1 Body Diode
(3) Source
Gate-source voltage VGSS