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SEMICONDUCTOR MJE13009F
TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR

SWITCHING REGULATOR APPLICATION.
HIGH VOLTAGE SWITCHING APPLICATION.
HIGH SPEED DC-DC CONVERTER APPLICATION.

FEATURES
Excellent Switching Times
: ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=8A
High Collector Voltage : VCBO=700V.

MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 700 V
Collector-Emitter Voltage VCEO 400 V
Emitter-Base Voltage VEBO 9 V
DC IC 12
Collector Current A
Pulse ICP 24
Base Current IB 6 A
Collector Power Dissipation
PC 50 W
(Tc=25 )
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150

ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Emitter Cut-off Current IEBO VEB=9V, IC=0 - - 1 mA
hFE(1) (Note) VCE=5V, IC=5A 14 - 28
DC Current Gain
hFE(2) VCE=5V, IC=8A 6 - -
IC=5A, IB=1A - - 1
Collector-Emitter
VCE(sat) IC=8A, IB=1.6A - - 1.5 V
Saturation Voltage
IC=12A, IB=3A - - 3
IC=5A, IB=1A - - 1.5
Base-Emitter Saturation Voltage VBE(sat) V
IC=8A, IB=1.6A - - 1.6
Collector Output Capacitance Cob VCB=10V, f=0.1MHz, IE=0 - 180 - pF
Transition Frequency fT VCE=10V, IC=0.5A 4 - - MHz

OUTPUT
Turn-On Time ton 300