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SEMICONDUCTOR MPSA05
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
DRIVER STAGE AMPLIFIER APPLICATIONS.
VOLTAGE AMPLIFIER APPLICATIONS.
B C
FEATURES
A
Complementary to MPSA55.
Driver Stage Application of 20 to 25 Watts Amplifiers. N DIM MILLIMETERS
E A 4.70 MAX
K
G B 4.80 MAX
D C 3.70 MAX
J
D 0.45
E 1.00
F 1.27
MAXIMUM RATING (Ta=25 ) G 0.85
H 0.45
_
CHARACTERISTIC SYMBOL RATING UNIT H J 14.00 + 0.50
F F K 0.55 MAX
L 2.30
Collector-Base Voltage VCBO 60 V M 0.45 MAX
N 1.00
Collector-Emitter Voltage VCEO 60 V
C
1 2 3
L
M
Emitter-Base Voltage VEBO 6 V 1. EMITTER
2. BASE
Collector Current IC 500 mA 3. COLLECTOR
Emitter Current IE -500 mA
Collector Power Dissipation PC 625 mW TO-92
Junction Temperature Tj 150
Storage Temperature Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=60V, IE=0 - - 100 nA
Emitter Cut-off Current ICEO VCE=60V, IB=0 - - 100 nA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=5mA, IB=0 60 - - V
hFE(1) VCE=1V, IC=10mA 100 - -
DC Current Gain
hFE(2) VCE=1V, IC=100mA 100 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - - 0.25 V
Base-Emitter Voltage VBE VCE=1V, IC=100mA - - 1.2 V
Transition Frequency fT VCE=1V, IC=10mA 80 - - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 10 - pF
1998. 1. 9 Revision No : 2 1/1