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HN1B01F
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)

HN1B01F
Audio-Frequency General-Purpose Amplifier Applications
Unit: mm

Q1:
High voltage and high current
: VCEO = -50 V, IC = -150 mA (max)
High hFE : hFE = 120~400
Excellent hFE linearity
: hFE (IC = -0.1 mA) / hFE (IC = -2 mA) = 0.95 (typ.)

Q2:
High voltage and high current
: VCEO = 50 V, IC = 150 mA (max)
High hFE : hFE = 120~400
Excellent hFE linearity
: hFE (IC = 0.1 mA) / hFE (IC = 2 mA) = 0.95 (typ.)

JEDEC
JEITA
TOSHIBA 2-3N1A
Weight: 0.015 g (typ.)

Q1 Absolute Maximum Ratings (Ta = 25