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STP20NM65N
STF20NM65N
N-channel 650 V, 0.250 15 A TO-220, TO-220FP
,
second generation MDmeshTM Power MOSFET
Features
VDSS RDS(on)
Order codes ID
@Tjmax max.
STP20NM65N
710 V 0.270 15 A
STF20NM65N
100 % avalanche tested 2
3 3
2
1 1
Low input capacitance and gate charge TO-220 TO-220FP
Low gate input resistance
Application
Switching applications
Figure 1. Internal schematic diagram
Description
These devices are N-channel Power MOSFETs
realized using the second generation MDmeshTM
technology. This revolutionary Power MOSFET
associates a new vertical structure to the
company's strip layout to yield one of the world's
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Table 1. Device summary
Order codes Marking Package Packaging
STP20NM65N 20NM65N TO-220 Tubes
STF20NM65N 20NM65N TO-220FP Tubes
May 2011 Doc ID 13845 Rev 2 1/16
www.st.com 16
Contents STP20NM65N, STF20NM65N
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristecs (curves) ........................... 6
3 Test circuits .............................................. 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16 Doc ID 13845 Rev 2
STP20NM65N, STF20NM65N Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol Parameter Unit
TO-220 TO-220FP
VDS Drain source voltage 650 V
VGS Gate source voltage