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Advance Technical Information
GigaMOSTM IXFK170N20T VDSS = 200V
Power MOSFET IXFX170N20T ID25 = 170A
RDS(on) 11m
N-Channel Enhancement Mode
trr 200ns
Avalanche Rated
Fast Intrinsic Diode TO-264 (IXFK)
Symbol Test Conditions Maximum Ratings
G
VDSS TJ = 25