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STW45NM60
N-channel 650V@Tjmax - 0.09 - 45A - TO-247
MDmeshTM Power MOSFET
Features
VDSS
Type RDS(on) ID
(@Tjmax)
STW45NM60 650V < 0.11 45A
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
TO-247
Low gate input resistance
Description
The MDmeshTM is a new revolutionary Power
MOSFET technology that associates the multiple
drain process with the Company's PowerMESHTM Internal schematic diagram
horizontal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company's proprietary strip
technique yields overall dynamic performance
that is significantly better than that of similar
competitor's products.
Application
Switching application
Order code
Part number Marking Package Packaging
STW45NM60 W45NM60 TO-247 Tube
April 2007 Rev 8 1/12
www.st.com 12
Contents STW45NM60
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 Test circuit ................................................ 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STW45NM60 Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VGS Gate- source voltage