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STD2NC45-1
N-channel 450 V, 4.1 1.5 A, IPAK
,
SuperMESHTM Power MOSFET
Features
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
New high voltage benchmark
3
2
1
Application
IPAK
Switching applications
Description
The SuperMESHTM series is obtained through an
extreme optimization of ST's well established
strip-based PowerMESHTM layout. In addition to
pushing on-resistance significantly down, special Figure 1. Internal schematic diagram
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage Power MOSFETs including revolutionary
MDmeshTM products.
Table 1. Device summary
Order code Marking Package Packaging
STD2NC45-1 D2NC45 IPAK Tube
April 2009 Doc ID 9103 Rev 4 1/13
www.st.com 13
Contents STD2NC45-1
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 Test circuits ............................................... 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13 Doc ID 9103 Rev 4
STD2NC45-1 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 450 V
VGS Gate- source voltage