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2ST31A

Low voltage NPN power transistor

Features
High switching speed
TAB
Good performances in terms of hFE linearity

Application
Linear and switching industrial applications
3
2
Description 1

TO-220
The device is manufactured in planar technology
with "base island" layout. The resulting transistor
shows high gain performance coupled with low
saturation voltage.
Figure 1. Internal schematic diagram

Table 1. Device summary
Order code Marking Package Packaging

2ST31A 2ST31A TO-220 Tube

December 2010 Doc ID 17868 Rev 2 1/8
www.st.com 8
Absolute maximum ratings 2ST31A

1 Absolute maximum ratings

Table 2. Absolute maximum ratings
Symbol Parameter Value Unit

VCBO Collector-base voltage (IE = 0) 60 V
VCEO Collector-emitter voltage (IB = 0) 60 V
VEBO Emitter-base voltage (IC = 0) 5 V
IC Collector current 3 A
ICM Collector peak current 5 A
IB Base current 1 A
PTOT Total dissipation at Tcase = 25