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SEMICONDUCTOR BC807A
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR


GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
FEATURES L B L
DIM MILLIMETERS
Complementary to BC817A. A _
2.93 + 0.20
B 1.30+0.20/-0.15
C 1.30 MAX




D
2 3 0.45+0.15/-0.05
D




A

G
E 2.40+0.30/-0.20




H
1 G 1.90
H 0.95
MAXIMUM RATING (Ta=25 ) J 0.13+0.10/-0.05
K 0.00 ~ 0.10
CHARACTERISTIC SYMBOL RATING UNIT L 0.55
P P
M 0.20 MIN
Collector-Base Voltage VCBO -50 V N 1.00+0.20/-0.10




N
P 7




C




J
Collector-Emitter Voltage VCEO -45 V
M




K
Emitter-Base Voltage VEBO -5 V
Collector Current IC -500 mA 1. EMITTER
2. BASE
Emitter Current IE 500 mA
3. COLLECTOR
Collector Power Dissipation PC* 350 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150 SOT-23
* : Package Mounted On 99.9% Alumina 10 8 0.6mm.




ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-20V, IE=0 - - -0.1 A
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 A
hFE(1) VCE=-1V, IC=-100mA 100 - 630
DC Current Gain (Note)
hFE(2) VCE=-1V, IC=-500mA 40 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-50mA - - -0.7 V
Base-Emitter Voltage VBE VCE=-1V, IC=-500mA - - -1.2 V
Transition Frequency fT VCE=-5V, IC=-10mA, f=100MHz 80 - - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 9 - pF
Note : hFE Classification 16:100 250 , 25:160 400 , 40:250 630



Marking
MARK SPEC Lot No.

TYPE. BC807A-16 BC807A-25 BC807A-40
Type Name
MARK 1M 1N 1P




2009. 2. 19 Revision No : 2 1/2
BC807A


h FE - I C I C - VCE

1000 -800
COMMON EMITTER




COLLECTOR CURRENT IC (mA)
COMMON EMITTER
500 VCE =-1V Ta=25 C
DC CURRENT GAIN h FE




300 -600
Ta=100 C -5 -4
Ta=25 C
-3
100 Ta=-25 C
-400
-2
50
30 -200 I B =-1mA


0
10 0
-10 -30 -100 -300 -1000 0 -1 -2 -3 -4 -5 -6


COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE V CE (V)




VCE(sat) - I C I C - V BE
COLLECTOR-EMITTER SATURATION




-3 -1000
COMMON EMITTER
COLLECTOR CURRENT I C (mA)




COMMON EMITTER
VCE =1V
I C /IB =25 -300
VOLTAGE VCE(sat) (V)




-1

-100
-0.3



C


C


C
100
Ta=100 C -30




25


-25
Ta=
Ta=




Ta=
-0.1
Ta=25 C
-10

-0.03 Ta=-25 C -3

-0.01 -1
-10 -30 -100 -300 -1000 -0.2 -0.4 -0.6 -0.8 -1.0


COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE V BE (V)




fT - I C P C - Ta

500 500
COLLECTOR POWER DISSIPATION




COMMON EMITTER
300
TRANSITION FREQUENCY




VCE =-5V Ta=25 C
400
f T (MHz)




P C (mW)




100 300


200
30
100


10 0
-1 -3 -10 -30 -100 -300 -1000
0 25 50 75 100 125 150 175

COLLECTOR CURRENT I C (mA) AMBIENT TEMPERATURE Ta ( C)




2009. 2. 19 Revision No : 2 2/2