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BUK9E06-55A
N-channel TrenchMOS logic level FET
Rev. 04 -- 31 May 2010 Product data sheet

1. Product profile

1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits
Low conduction losses due to low Suitable for logic level gate drive
on-state resistance sources
Q101 compliant Suitable for thermally demanding
environments due to 175