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PBRP123YT
PNP 800 mA, 40 V BISS RET; R1 = 2.2 k, R2 = 10 k
Rev. 01 -- 17 December 2007 Product data sheet

1. Product profile

1.1 General description
800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped
Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic
package.

NPN complement: PBRN123YT.

1.2 Features
I 800 mA repetitive peak output current I Low collector-emitter saturation voltage
VCEsat
I High current gain hFE I Reduces component count
I Built-in bias resistors I Reduces pick and place costs
I Simplifies circuit design I