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SEMICONDUCTOR KTD2854
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS.
SWITCHING APPLICATIONS.
B D
POWER AMPLIFIER APPLICATION.
FEATURES
A
High DC Current Gain P
DEPTH:0.2
DIM MILLIMETERS
A 7.20 MAX
: hFE=2000(Min.) (VCE=2V, IC=1A) C
B 5.20 MAX
C 0.60 MAX
G
Low Saturation Voltage Q
S
D 2.50 MAX
E 1.15 MAX
: VCE(sat)=1.5V(Max.) (IC=1A, IB=1mA) K
F 1.27
J
R
Complementary to KTB2234. G 1.70 MAX
F F H 0.55 MAX
J _
14.00 + 0.50
K 0.35 MIN
H H H
L _
0.75 + 0.10
M E M M 4
N 25
MAXIMUM RATINGS (Ta=25 ) O 1.25
D
1 2 3 L
O
H P 1.50
CHARACTERISTIC SYMBOL RATING UNIT N N Q 0.10 MAX
R _
12.50 + 0.50
1. EMITTER
Collector-Base Voltage VCBO 100 V S 1.00
2. COLLECTOR
Collector-Emitter Voltage VCEO 100 V 3. BASE
Emitter-Base Voltage VEBO 8 V
DC IC 2 TO-92L
Collector Current A
Pulse ICP 3
Base Current IB 0.5 A
PC
EQUIVALENT CIRCUIT
Collector Power Dissipation 1 W
COLLECTOR
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
BASE
4k
- -800
EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=80V, IE=0 - - 10 A
Emitter Cut-off Current IEBO VEB=8V, IC=0 - - 4 mA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 100 - - V
DC Current Gain hFE VCE=2V, IC=1A(Pulse) 2000 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=1A, IB=1mA(Pulse) - - 1.5 V
Base-Emitter Saturation Voltage VBE(sat) IC=1A, IB=1mA(Pulse) - - 2.0 V
Transition Frequency fT VCE=2V, IC=0.5A - 100 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 20 - pF
Turn On Time ton - 0.4 -
Switching
Storage Time tstg - 4.0 - S
Time
Fall Time tf - 0.6 -
2001. 10. 23 Revision No : 0 1/3
KTD2854
Ta=-55 C
00 C
Ta=1
C Ta=25 C
Ta=25 C
Ta=100
2001. 10. 23 Revision No : 0 2/3
KTD2854
2001. 10. 23 Revision No : 0 3/3