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STGW30NB60HD
N-CHANNEL 30A - 600V - TO-247
PowerMESHTM IGBT
TYPE VCES VCE(sat) (Max) IC
STGW30NB60HD 600 V < 2.8 V 30 A
s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
s LOW ON-VOLTAGE DROP (VCESAT)
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
3
s VERY HIGH FREQUENCY OPERATION 2
1
s OFF LOSSES INCLUDE TAIL CURRENT
s CO-PACKAGED WITH TORBOSWITCHTM
ANTIPARALLEL DIODE TO-247
DESCRIPTION
Using the latest high voltage technology based on a INTERNAL SCHEMATIC DIAGRAM
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESHTM IGBTs, with outstanding performances.
The suffix "H" identifies a family optimized to
achieve very low switching times for high frequency
applications (<120KHz).
APPLICATIONS
s HIGH FREQUENCY MOTOR CONTROLS
s WELDING EQUIPMENTS
s SMPS AND PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VGS = 0) 600 V
VECR Emitter-Collector Voltage 20 V
VGE Gate-Emitter Voltage