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RJP020N06
Transistors
2.5V Drive Nch MOS FET
RJP020N06
Structure External dimensions (Unit : mm)
Silicon N-channel MOS FET
MPT3
4.5
0.5
1.6 1.5
Features
2.5
1) Low On-resistance.
4.0
2) Low voltage drive (2.5V drive). (1) (2) (3)
1.0
0.4
0.4 0.5 0.4
1.5 1.5
(1)Gate 3.0
Applications (2)Drain
Switching (3)Source Abbreviated symbol : LS
Packaging specifications Inner circuit
DRAIN
Package Taping
Type Code T100
Basic ordering unit (pieces) 1000
RJP020N06 GATE 2
1
SOURCE
1 ESD PROTECTION DIODE
2 BODY DIODE
Absolute maximum ratings (Ta=25