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PMBFJ620
Dual N-channel field-effect transistor
Rev. 01 -- 11 May 2004 Product data sheet

1. Product profile

1.1 General description
Two N-channel symmetrical junction field-effect transistors in a SOT363 package.

CAUTION
This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken
during transport and handling.

MSC895

1.2 Features
s Two field effect transistors in a single package
s Low noise
s Interchangeability of drain and source connections
s High gain.

1.3 Applications
s AM input stage in car radios
s VHF amplifiers
s Oscillators and mixers.

1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per FET
VDS drain-source voltage - -