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UMB3N
General purpose transistors (dual transistors)
SOT-363
FEATURES
Two DTA143T chips in a package
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Mounting possible with SOT-363 automatic mounting machines.
Transistor elements are independent, eliminating interference.
Mounting cost and area be cut in half.
Marking: B3
Equivalent circuit
Absolute maximum ratings(Ta=25)
Parameter Symbol Limits Unit
Collector-base voltage V(BR)CBO -50 V
Collector-emitter voltage V(BR)CEO -50 V
Emitter-base voltage V(BR)EBO -5 V
Collector current IC -100 mA
Collector Power PC 150 mW
Junction temperature Tj 150
Storage temperature Tstg -55~150
Electrical characteristics (Ta=25)
Parameter Symb Min Typ Max Unit Conditions
Collector-base breakdown voltage V(BR)CB -50 V IC=-50A
Collector-emitter breakdown voltage V(BR)CE -50 V IC=-1mA
Emitter-base breakdown voltage V(BR)EB -5 V IE=-50A
Collector cut-off current ICBO -0.5 A VCB=-50V
Emitter cut-off current IEBO -0.5 A VEB=-4V
Collector-emitter saturation voltage VCE(sat) -0.3 V IC=-5mA,IB=-0.25mA
DC current transfer ratio hFE 100 600 VCE=-5V,IC=-1mA
Input resistance R1 3.29 4.7 6.11 K
Transition frequency fT 250 MHz VCE=-10V ,IE=5mA,f=100
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JinYu www.htsemi.com
semiconductor
Date:2011/ 05